Phase Change Memory cell design by thermal analysis with Finite element Simulation

摘要：

A comprehensive thermal analysis of the Phase change random memory (PCRAM) by 3D finite element modeling is proposed. The impact of thermal on device cell design and optimization is investigated. Such an analysis can be used as a guideline for the optimum design. This manuscript provides an insight into the thermal issues and the phenomena in the PCRAM Refined structure,ring in GST structure (RIG),is proposed for high density and low power consumption.

作者: Yue-Feng Gong Yun Ling Zhi-Tang Song Song-lin Feng

作者单位: State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai I State Key Laboratory of Functional Materials for Informatics,Laboratory of Nanotechnology,Shanghai I

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 508-511

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）