Electrothermal Coupling and Threshold-switching Simulation Study on Phase Change Memory (PCM) Cell

摘要：

As one of the candidates of the next generation non-volatile memory(NVM),phase change memory(PCM) has been paid more attention. But there are many open issue in simulation and phase-change mechanism. In this work,an electrothermal simulation is implemented,which can provide an evaluation method for PCM geometry and scaling design. At the time,a threshold-switching mechanism is discussed. A threshold-switching curve is achieved using device simulator,results show that this mechanism can explain the threshold-switching phenomenon.

关键词： PCM Electrothermal Threshold-switching Simulation

作者: YiqunWei Chi Liu Xinnan Lin Jin He Xing Zhang Mansun Chan

作者单位: Micro-& Nano Electric Device and Integrated Technology Group,The Key Laboratory of Integrated Micros Department of Electronical and Computer Engineering,Hong Kong University of Science and Technology,C

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 512-515

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）