A Study of Advanced Modeling Methodology of CMOS-compatible RF-MEMS Devices for Integrated Circuit Design

摘要：

With the rapid development of CMOS-compatible MEMS technology,it has been used to improve the performance of monolithic integrated RF circuits. To take advantages of the MEMS devices in RF circuits,accurate models are needed,with the considerations of important effects that impact the electrical behavior of the devices. In this paper,we explore the modeling methodology for CMOS-compatible MEMS inductors,which are fabricated with two different process approaches. Based on device simulation results for mechanical and electrical behavior,we propose a SPICE-like model for CMOS-compatible RF-MEMS inductors used for integrated circuit design.

作者: Wenzheng Wu Mengjun Jia Xinxin Li Yilong Hao Xing Zhang Yuhua Cheng

作者单位: Snanghai Research Institute of Microelectronics (SHRIME),Peking University 608 Shengxia Road,Zhang-J Snanghai Research Institute of Microelectronics (SHRIME),Peking University 608 Shengxia Road,Zhang-J Shanghai Institute of Microsystem and Information Technology(SIMIT),CAS,Shanghai 200050,P.R.China School of Software and Microelectronics,Peking University,Beijing 102600,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 516-519

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）