A new MOS Varactor Bsim4 model with temperature effect

摘要：

In this paper we present a new BSIM4-based RF MOS varactor model. The new model accurately models the varactor behavioral for the submicron MOS when the gate leakage effect needs to included. The model also accounts for the temperature effect when parasitic resistance and capacitance are considered in the Q-factor extraction.

作者: Zhanfei Chen Waisum Wong Jenhao Cheng Danmy He

作者单位: Semiconductor Manufacturing International Corporation,Shanghai 201203,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 527-529

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）