The Application of Carbon Nanotubes in CMOS Integrated Circuits

摘要：

With the complementary metal-oxide-semiconductor (CMOS) technology approaching its scaling limit,many novel devices and material are being considered to enable further scaling of CMOS. Carbon nanotubes show unique properties and are currently considered as a potential alternative material for nano-CMOS building blocks. Performance of carbon nanotube field effect transistors (CNFET) can be competitive with Si MOSFET in the sub-20nm regime. With its superior material properties,CNT can also function as quantum wire and a critical material for the integrated circuit interconnection. In this talk,we shall present some of the works we have done on applying carbon nanotubes to the CMOS Integrated Circuits in our research group at the Hong Kong University of Science and Technology.

作者: Philip C.H.Chan Chai Yang Min Zhang Yunyi Fu

作者单位: Department of Electronics and Computer Engineering The Hong Kong University of Science and Technology Peking University

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 534-536

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）