Carbon nanotube via interconnects with large current carrying capacity

摘要：

We fabricated a carbon nanotube (CNT) via interconnect and evaluated its electrical properties. We found that the CNT via resistance was independent of temperatures,which suggests that the carrier transport is ballistic. From the via height dependence of the resistance,the electron mean free path was estimated to be about 80 nm,which is similar to the via height predicted for hp32-nm technology node. This indicates that it will be possible to realize CNT vias with ballistic transport for hp32-nm technology node and below. It was also found that a CNT via was able to sustain a current density as high as 5.0×106 A/cm2 at 105 ℃ for 100 hours without any deterioration.

作者: Mizuhisa Nihei Yuji Awano Akio Kawabata Shintaro Sato Tatsuhiro Nozue Takashi Hyakushima Masaaki Norimatsu Tomo Murakami Daiyu Kondo Mari Ohfuti

作者单位: MIRAI-Selete (Semiconductor Leading Edge Technologies,Inc.),10-1,Morinosato-Wakamiya,Atsugi 243-0197,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 541-543

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）