Fabrication and DC Current-Voltage Characteristics of Real Space Transfer Transistor with dual-quantum-well channel

摘要：

We reported the standard Λ shape negative differential resistance as well as a level and smooth valley region in real space transfer transistor (RSTT) with dual-quantum-well channel,which are formed by 8-doping GaAs quantum-well and InGaAs/GaAs heterojunction quantum-well. The highest peak-to-valley current ratio (PVCR) of RSTT reaches 4 at room temperature. The highest peak current density transconductance (ΔJp/ΔVGS) is 130ms/mm,which demonstrates the control ability of gate to Jp. The mechanism of obvious NDR of RSTT can be explained that the hot electron in the InGaAs U-shaped quantum-well channel transfers into V-shaped δ-doping GaAs quantum-well channel,and the hot electron transfers into gate electrode from V-shaped δ-doping GaAs quantum-well channel. This novel NDR device would be expected to applied in NDR circuits to instead of RTD+HEMT.

关键词： Real space transfer (RST) Real space transfer transistor (RSTT) negative differential resistance (NDR) 5-doping InGaAs/GaAs

作者: Xin YU Shilin ZHANG Luhong MAO Weilian GUO Xiaoli WANG

作者单位: School of Electronic Information Eng.,Tianjin University,Tianjin 300072,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 563-566

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）