The design,fabrication and characterization of GaAs-based RTT with groove and self-aligned Schottky gate structure

摘要：

In this paper,the design of material structure and device structure,fabrication processing and characterization on GaAs based Resonant Tunneling Transistor (KTT) with groove and self-aligned gate structure have been described completely and systematically. The experimental results measured from our fabricated KTT show that : the maximum value of Peak to Valley Current Ratio (PVCR) is 46,the transconductance gm is in a range of 1.3～8.0 ms,the cutoff frequency fTgm and speed index S are 1.59GHz and 13.5ps/V respectively.

关键词： Resonant Tunneling Transistor (RTT) gate controlled structure sckottky gate GaAs based quantum tunneling effect

作者: Wei-Lian Guo Ya-Li Li Yong-Qiang Liu Ming-Wen Yuan Xiao-Bai Li Ping-Juan Niu Xiao-yun Li Chang-Yun Miao Wei Wang Xin Yu Yao-Hui Shang Zhen Feng Guo-Ping Tian

作者单位: School of Infonnation and Communication.Tainjin Polytechnic University .Tianjin,China,300160　13th In 13th Institute of CETC,Shijiazhuang China,050051 School of Infonnation and Communication.Tainjin Polytechnic University .Tianjin,China,300160

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 571-574

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）