Theoretical and ezperimental results of a fully ballistic nano-FET with high gain

摘要：

We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET,the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point constriction.

作者: E.Gremion D.Niepce U.Gennser A.Cavanna Y Jin

作者单位: CNRS/Laboratoire de Photonique et de Nanostructures (LPN),91460 Marcoussis,France

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 588-591

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）