Theoretical and ezperimental results of a fully ballistic nano-FET with high gain
We report on the experimental evidence of a fully ballistic nano-FET with a voltage gain higher than 1 which is based on a 1D quantum ballistic conductor. In such a FET,the transconductance and the output conductance are basically modulated by the 1D subbands and the experimental results can theoretically be explained based on the Landauer-Buttiker formalism and the Buttiker model of the saddle-point constriction.
E.Gremion D.Niepce U.Gennser A.Cavanna Y Jin
CNRS/Laboratoire de Photonique et de Nanostructures (LPN),91460 Marcoussis,France
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
588-591
2008-10-20(万方平台首次上网日期,不代表论文的发表时间)