Theoretical investigation into I-V characteristics of the benzene-molecular system

摘要：

Experiments and theory have so far demonstrated that single molecules can form the core of a two-terminal device.Here this paper simulates the I-V characteristics of the benzene-molecular system on the basis of the tight-binding method. The results exhibit negative differential resistance and an on-off peak-to-valley ratio in excess of 1400:1 when the temperature is 100k. And discusses the influence of temperature on the current. The result sheds new light on the I-V properties of molecular devices and shows that such calculations would be useful in designing devices for future nanotechnology.

关键词： Tight-Binding I-V characteristics benzene-molecular

作者: Li Na Cai Min

作者单位: School of Electronic and Information Engineering South China Univ.of Tech.Guangzhou 510640,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 600-603

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）