Issues and Controversies in NBTI Degradation and Recovery Mechanisms for p-MOSFETs with SiON Gate Dielectrics

摘要：

Some issues and controversies in NBTI degradation and recovery mechanisms for p-MOSFETs with SiON gate dielectrics are summarized. The resolutions of these issues from our point of view are illustrated.

作者: Ming-Fu Li Darning Huang W.J.Liu Z.Y.Liu Yong Luo C.C.Liao L.F.Zhang Z.H.Gan Waisum Wong

作者单位: State Key Lab ASIC & Syst,Dept Microelectronics,Fudan University,Shanghai 201203,China SNDL,ECE Dept State Key Lab ASIC & Syst,Dept Microelectronics,Fudan University,Shanghai 201203,China Semiconductor Manufacturing International Corp.,Shanghai 201203 China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 604-607

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）