Recent progress in understanding the instability and defects in gate dielectrics

摘要：

This work gives a review of the recent progress in understanding the instability and defects in gate dielectrics. It consists of two parts: electron-trapping for nMOSFETs and positive charging for pMOSFETs. On electron traps,the issues addressed include the relation between conduction mechanism and trap-filling,the capture cross section,location and sensitivity to fabrication techniques. On positive charging,a framework is proposed for the defect and the unique impact of each type of defect on device performance will be shown. Finally,the progress in NBTI measurement will be highlighted.

作者: J.F.Zhang M.H.Chang Z.Ji W.D.Zhang

作者单位: School of Engineering,Liverpool John Moores University,Liverpool L3 3AF,U.K.

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 608-611

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）