Gate Insulator Process Dependent NBTI in SiON p-MOSFETs

摘要：

The material dependence of NBTI in SiON p-MOSFETs is studied using the UF-OTF IDLiN method. It is shown that the N density at the Si/SiON interface plays a very crucial role in determining the magnitude as well as the time,temperature and field dependence of NBTI. The relative contribution of interface trap generation and hole trapping to overall degradation is qualitatively discussed.

作者: S.Mahapatra V.D.Maheta

作者单位: Department of Electrical Engineering,IIT Bombay,Mumbai 400076,India

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 616-619

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）