The transient behavior of NBTI-A new prospective
The Negative-Bias-Temperature-Instability (NBTI) is currently one of the most serious reliability issues in advanced CMOS technology. Specifically,the fast recovery of NBTI degradation immediately after stress is removed has recently become a hot topic. The major NBTI debates center on the responsible mechanism,the proper measurement method,and the possible impact on reliability. We show that the observed fast transient degradation is a consequence of high-field stressing and has nothing to do with traditional NBTI. We further show that most current NBTI experiments fail to capture an additional transient component that can potentially impact reliability more severely.
Kin P.Cheung J.P.Campbell
National Institute of Standards & Technology,Gaithersburg,MD 20899 USA
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
620-623
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）