CDM Protection of High Voltage LDMOS for Automotive Applications
In recent years,CDM compliance has been widely accepted as a critical part of product qualification to ensure product robustness. Hence technologies developed to support automotive market has increasingly required full AEC-Q100 ESD compliance to include a minimum of 500V CDM robustness in addition to HBM and MM specifications. The high voltage devices developed to support 45V to 80V pins are typical requirements for automotive designs to support inductive loading from solenoid current which can generate dual polarity peak transients. The ESD protections designed for these pins need to be very compact high current device capable of clamping+65V in forward mode coupled with -5V in reverse mode. These ESD protections must also respond to transients of rise time (tr) ranging from 10ns to 100ps to protect against HBM to CDM stress. This paper will present CDM design strategy to protect high voltage laterally diffused MOS (LDMOS) devices,requiring both primary and secondary ESD protection circuitry for 750V CDM compliance.
Chai Gill Abhijat Goyal
Technology Solution Organization,Freescale Semiconductor Inc.,Tempe,Arizona,USA -85284
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
628-631
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）