Characteristics of As-grown Hole Trapping in Silicon Ozynitride p-MOSFETs Subjected to Negative Bias Temperature Stress

摘要：

As the most important reliability issue for the modern CMOS industry,p-MOSFET negative bias temperature instability (NBTI) is so serious now that limits the device lifetime. This paper addresses the characteristics of one of the oxide defects that responsible for NBTI,the as-grown hole trapping (AHT). It is found that AHT dominates NBTI at the beginning of stress,but its contribution decreases with stress time because of more generation of oxide positive charges as well as interface states. The formation of AHT is controlled by substrate hole injection which depends on the gate voltage other than temperature. Both the capture cross sections and distributions of AHT are investigated and compared with that of thicker oxides.

关键词： Capture cross section hole trap negative bias temperature instability (NBTI) ozynitride positive charge

作者: Yangang Wang J.F.Zhang M.H.Chang MingzhenXu Changhua Tan

作者单位: School of Engineering,Liverpool John Moores University,Byrom St,Liverpool L3 3AF,UK School of Electr School of Engineering,Liverpool John Moores University,Byrom St,Liverpool L3 3AF,UK Institute of Microelectronics,Peking University,Beijing,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 632-635

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）