Recovery Characteristics of NBTI of pMOSFETs with Ozynitride Dielectrics Under Drain Bias

摘要：

In this paper,the recovery characteristics of negative bias temperature instability (NBTI) of pMOSFETs under drain bias were studied. It is observed that,the drain bias not only worsens the NBTI degradation in high |Vds| region but also suppresses the recovery ratio of NBTI. The time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial 1s. While in long time scale,the recovery obeys power law dependence on time. A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.

作者: Jiaqi Yang H.M.Wu Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han Jinfeng Kang L.F.Zhang Z.W.Zhu C.C.Liao

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi Semiconductor Manufacturing International Corporation,Shanghai 201203,Peoples Republic of China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 636-639

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）