Characteristics of NBTI in pMOSFETs with Thermally and Plasma Nitrided Gate Ozides

摘要：

Negative bias temperature instability in pMOSFETs with thermally and plasma nitrided oxides is investigated using quasi-DC Id-Vg (slow Id-Vg) and on-the-fly interface trap (OFIT) measurement methods. By comparing the OFIT results with those observed from Id-Vg measurements,we found that the threshold voltage shift measured by slow Id-Vg is mainly due to the interface trap since the oxide charge is essentially detrapped during the measurement delay. Quantitatively,the interface trap density measured by OFIT method is higher than that by slow Id-Vg measurement,since the latter measurement is subjected to the recovery effect. For the thermally and plasma nitrided oxides,we found the interface trap density is higher for thermally nitride oxide. However,the power law time exponent n as stress time is the same for the pMOSFETs with both processes.

作者: W.J.Liu W.Wong Ming-Fu Li Z.Y.Liu Y.Luo G.F.Jiao X.Y.Huang D.Huang C.C.Liao L.F.Zhang Z.H.Gan

作者单位: State Key Lab ASIC & Syst,Dept.Microelectronics,Fudan University,Shanghai 201203,China Semiconductor Manufacturing International Corp.,Shanghai 201203 China State Key Lab ASIC & Syst,Dept.Microelectronics,Fudan University,Shanghai 201203,China SNDL,ECE Dept

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 648-650

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）