A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

摘要：

The total dose radiation effect (TDRE) has been regarded as one of the most harmful factors to degrade MOS devices 1. In this paper,a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS devices 2. Like TDRE,avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage (ΔVFB) of MOS device,we can conclude that the structure which has a greater Δ VFB would be easier to be affected by TDRE.

作者: Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin

作者单位: Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi Key Laboratory of Microelectronic Devices and Circuits,Institute of Microelectronics,Peking Universi

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 659-661

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）