Evolution of wetting layers in InAs/GaAs quantum-dot system studied by reflectance difference spectroscopy
The wetting layers (WL) in InAs/GaAs quantum-dot system have been studied by reflectance difference spectroscopy (RDS),in which two structures related to the heavy-hole (HH) and light-hole (LH) transitions in the WL have been observed. The evolution and segregation behaviors of WL during Stranski-Krastanow (SK) growth mode have been studied from the analysis of the WL-related optical transition energies. It has been found that the segregation coefficient of Indium atoms varies linearly with the InAs amount in WL. In addition,the effect of the growth temperature on the critical thickness for InAs island formation has also been studied. The critical thickness defined by the appearance of InAs dots,which is determined by AFM,shows a complex variation with the growth temperature. However,the critical thickness determined by RDS is almost constant in the range of 510-540℃.
Yonghai Chen Chenguang Tang Bo Xu Peng Jin Zhanguo Wang
Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,P.R.China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
673-676
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）