Strain and surface roughness control of SiGe layer deposited by ion beam sputtering

摘要：

Strain-relaxed SiGe layer toward file preparation of strain Si layer was prepared by using ion-beam sputtering technique. Samples prepared at acceleration voltage of 300V show high relaxation regardless of the film thickness and growth temperature,while the surface roughness increases largely with increasing thickness. As for the case of 500V,although the relaxation and roughness increase with increasing the thickness and growth temperature,samples with small roughness and high relaxation are obtained at 500℃. This phenomenon is related to the recoil Ar. It is found that the strain and surface roughness can be controlled by selecting preparation parameters deliberately. About 200nm SiGe film with roughness of ～ 2nm was obtained at the growth temperature of 500℃ with the acceleration voltage of 500V.

作者: Akinari Matoba Kimihiro Sasaki Minoru Kumeda

作者单位: Graduate School of Natural Sci.& Tech.of Kanazawa Univ.Kanazawa 920-1192,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 677-680

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）