Process Strain Induced by Nickel Germanide on (100) Ge Substrate

摘要：

Nickel germanides was formed on crystalline n-Ge (100) substrate by conventional RTA annealing at temperatures ranging from 300℃ to 600℃. The XRD result reveals that only the NiGe phase is observed during this process temperature range. The orthorhombic structure of NiGe also induces epitaxial tensile strain on Ge substrate (I.e.,NiGe itself is compressively strained) due to the difference in the lattice constants. The nickel-germanide/n-Ge Schottky contacts also reveals the slightly increasing electron barrier height (Φbn) with the increasing annealing temperature which confirms the Ge substrate is under tensile strain. The compressively strained NiGe,like compressive contact-etching-stop-layer (CESL),is beneficial for PMOS mobility enhancement.

作者: C.-Y.Peng Y.-H.Yang C.-M.Lin Y.-J.Yang C.-F.Huang C.W.Liu

作者单位: Department of Electrical Engineering,and Graduate Institute of Electronics Engineering,National Taiw Department of Electrical Engineering,and Graduate Institute of Electronics Engineering,National Taiw

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 681-683

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）