会议专题

Local strain evaluation for freestanding Si membranes by microphotoluminescence using UV laser ezcitation

UV laser excited microphotoluminescence (PL) was used to evaluate the local strain for freestanding Si membranes (FSSMs),which can be applied to the fabrication of high performance radiofrequency (RF) power amplifier. The FSSMs were fabricated by the mesa etching of Si on insulator followed by etching of the buried oxide. Compressive strain in the membranes was induced by SiN deposition using low-pressure chemical vapor deposition. By the optimization of optics,we successfully observed PLs for FSSMs by a 325 run laser excitation,which eliminated the substrate-related PL (S-PL) and improved the accuracy of the identification for PL peaks. Strain-induced band gap narrowing was directly observed by identifying the PL peak of the free exciton band-band transition in membranes,from which the strain ratio was estimated for each sample. Strain was reasonably dependent on the sample parameters,which implies that this measurement gives valid results. Based on the improved accuracy of PL peak identification by a UV laser excitation,a minor revision of the strain ratio results was also performed for our previous report for the same samples,which were measured by a 514 nm laser excited PL.

Dong Wang Haigui Yang Jun Morioka Tokuhide Kitamura Hiroshi Nakashima

Art,Science and Technology Center for Cooperative Research,Kyushu University,6-1 Kasuga-koen,Kasuga, Toshiba Corp.Semiconductor Co.,1-10-1 Shimoitozu Kokurakita-Ku Kitakyushu 803-8686,Japan Art,Science and Technology Center for Cooperative Research,Kyushu University,6-1 Kasuga-koen,Kasuga,

国际会议

9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

北京

英文

684-687

2008-10-20(万方平台首次上网日期,不代表论文的发表时间)