Atomically-Controlled Fe3Si/Ge Hybrid Structures for Group-IV-semiconductor Spin-transistor Application
Recent our progress in low temperature molecular beam epitaxy of magnetic silicide (Fe3Si) on group-IV-semiconductor (Ge) was reviewed. By optimizing beam flux ratio (Fe:Si=3:1) and growth temperature (130℃),a high quality hybrid structure,i.e.,DO3-type Fe3Si on Ge with an atomically flat interface,was achieved. Excellent magnetic properties with a small coercivity (0.8 Oe) and electrical properties with Schottky barrier height of 0.56 eV were obtained. The ratio of the on-current to the off-current of Schottky diode was the order of 104. These results will be a powerful tool to open up group-IV-semiconductor spin-transistors,consisting of Ge channel with high mobility and Fe3Si source/drain for spin-injection.
Masanobu Miyao Yuichiro Ando Koji Ueda Kohei Hamaya Yukio Nozaki Taizoh Sadoh Kimihide Matsuyama Kazumasa Narumi Yoshihito Maeda
Department of Electronics,Kyushu University,Fukuoka,819-0395,Japan Advanced Science Research Center,Japan Atomic Energy Agency,Takasaki,370-1292,Japan Department of Energy Science and Technology,Kyoto University,Kyoto,606-8501,Japan
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
688-691
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）