Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures
The leakage current mechanism in Schottky contacts (SCs) to Al0.25Ga0.75N/GaN heterostructures incorporated by thin high-temperature (HT) AlN interlayer has been investigated using current-voltage measurements,atomic force microscopy,and deep level transient spectroscopy. The HT AlN interlayer thickness has a significant effect on the leakage current in SCs. The leakage current density is reduced to 1.1×10(-4) A/cm2 rapidly when the growth time of AlN interlayer increases from 0 to 10 s,and then changes to increase with increasing the growth time. Correspondingly,the heterostructure with 10 s AlN interlayer has the least number of surface pinholes. HT AlN thickness also influences significantly the density of the electron traps with the activation energy of 0.762 eV in Al0.25Ga0.75N barrier. It is suggested that HT AlN interlayer adjusts microstructures and defect states density in Al(1-x)GaxN barrier,and leakage via these defect states makes the primary contribution to the leakage in SCs to Al(1-x)GaxN/GaN heterostructures.
Sen Huang Guoyi Zhang Bo Shen Fujun Xu Fang Lin Zhenlin Miao Jie Song Lin Lu Zhixin Qin Zhijian Yang
State Key Laboratory of Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,China
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
692-695
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）