High epitazial growth rate of 4H-SiC using TCS as silicon precursor

摘要：

High homoepitaxial growth of 4H-SiC has been performed in a home-made horizontal hot wall CVD reactor on n-type 4H-SiC 8° off-oriented substrates in the size of 10 mm×10 mm,using trichlorosilane (TCS) as silicon precursor source together with ethylene as carbon precursor source. Cross-section Scanning Electron Microscopy (SEM),Raman scattering spectroscopy and Atomic Force Microscopy (AFM) were used to determine the growth rate,structural property and surface morphology,respectively. The growth rate reached to 23μm/h and the optimal epilayer was obtained at 1600℃ with TCS flow rate of 12 seem in C/Si of 0.42,which has a good surface morphology with a low Rms of 0.64 nm in 10 μm×10μm area.

作者: Gang Ji Guosheng Sun Jin Ning Xingfang Liu Yongmei Zhao Lei Wang Wanshun Zhao Yiping Zeng

作者单位: Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sci State Key Laboratory of Transducer Technology,Institute of Semiconductors,Chinese Academy of Science

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 696-698

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）