Ferroelectric Properties of BiFezCr(1-z)O3 Thin Film Formed on Pt Electrodes
BiFexCr(1-x)O3 (x=0.4-0.6) thin films were formed on Pt/Ti/SiO2/Si (100) substrates by chemical solution deposition. The spin-coated,dried and calcined films were finally annealed in a mixed gas of N2 and O2 (N2:O2=4:1) at 450,500,550 and 600℃. X-ray diffraction analysis revealed that polycrystalline grains of BiFeO3 and BiCrO3 coexist in the films,and that double perovskite Bi2FeCrO6 crystallites might also be included. The leakage current density measured at room temperature was lower than 1×l0(-5) A/cm2 in the films annealed at 450℃. The remanent polarization increased with increase of the Fe ratio,and a large value of 45 μC/cm2 was obtained in the BiFe0,6Cr0.4O3 thin film,when it was measured at 1.9 MV/cm and 50 kHz. Fatigue property was also improved and no degradation of the remanent polarization was observed in the BiFe0.4Cr0.6O3 film by switching cycles up to 1×108.
ferroelectric FeRAM BiFeO3 BiCrO3 remanent polarization fatigue
Zhiyong Zhong Yoshihiro Sugiyama Hiroshi Ishiwara
Interdisciplinary Graduate School of Science and Engineering,Tokyo Institute of Technology,4259 Naga Fujitsu Laboratories Ltd.,10-1 Morinosato-Wakamiya,Atsugi 243-197,Japan
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
699-702
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）