UHV STM AND LEED STUDIES OF THE NUCLEATION AND GROWTH OF Ge THIN FILMS ON Si(113) SUBSTRATES

摘要：

Based on UHV STM and LEED observations we have investigated clean surface of Si(113),Ge/Si(113) interface and the reconstruction and morphology of the formation of Ge thin films and nanostructures on Si(113). We clarified that clean surface of Si(113) has 3×2 reconstruction and Ge/Si(113) interface -3×2 and 3×1 reconstructions. Analyzing the morphology of the formation of Ge films on Si(113) clearly show that it is possible to obtain considerable smooth and homogeneous Ge films on Si(113) at 430℃ substrate temperature after 30 minutes Ge deposition. The use of Bi surfactant allow to obtain more smooth and homogeneous Ge thin films and nanostructures on Si(113).

作者: G.Sh.Shmavonyan S.M.Zendehbad

作者单位: State Engineering University of Armenia,105 Teryan street,Yerevan,0002,Armenia

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 707-709

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）