Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor

摘要：

A detailed reaction-transport model was studied in a showerhead reactor for metal organic chemical vapor deposition of GaN film by using computational fluid dynamics simulation. It was found that flat flow lines without swirl are crucial to improve the uniformity of the film growth,and thin temperature gradient above the suscptor can increase the film deposition rate. By above-mentioned research,we can employ higher h (the distance from the susceptor to the inlet),P (operational pressure) and the rate of susceptor rotation to improve the film growth.

作者: Haibo Yin Xiaoliang Wang Guoxin Hu Junxue Ran Hongling Xiao Jinmin Li

作者单位: Materials Science Center,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,P.R China Semiconductor Lighting Technology Research and Development Center,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,P.R China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 710-713

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）