High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer

摘要：

When AlGaN is grown on GaN template,crack networks invariably generate when the thickness of the AlGaN layers over GaN exceeds the critical value. We used thin high temperature deposited AlN layer (HT-AlN) as the interlayer between GaN template and AlGaN epilayer which was very effective in eliminating the cracks in AlGaN epilayer. AlGaN layers with high Al mole fractions were also grown. Characterization showed that the crystalline quality of AlGaN epilayer was fairly good even when the Al mole fraction was high.

作者: Jianchang Yan Junxi Wang Zhe Liu Naixin Liu Jinmin Li

作者单位: R&D Center for Semiconductor Lighting,Institute of Semiconductors,Chinese Academy of Sciences,P.O.Box 912,Beijing 100083,Peoples Republic of China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 714-717

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）