Crystalline quality of InzAl(1-z)N with different indium contents around lattice-matched to GaN

摘要：

200 nm thick InxAl(1-x)N epilayers around lattice-matched to GaN were grown on GaN templates by MOCVD. The elastic strain,surface morphology and crystalline quaEty of the InxAl(1-x)N were evaluated by high resolution X-ray diffraction (HRXRD) measurements,scanning electron microscopy (SEM) images and Rutherford backscattering spectroscopy (RBS) analyses. The strain effect,as while as the influences of indium and the GaN templates with different dislocation densities on the quality of InxAl(1-x)N epilayers were discussed. It is found that the crystalline quality was quite good when InxAl(1-x)N around lattice matched to GaN and degraded when InxAl(1-x)N under relatively large tensile or compressive strain accompanied by formation of crack or pits of reverse pyramid. The micro-morphology observations of InxAl(1-x)N layers with different indium compositions showed that the formation of dislocations was related with indium and compressive strain in InxAl(1-x)N layers. Furthermore,more pits were observed in lattice matched InxAl(1-x)N layers on GaN template of high dislocation density than samples on GaN template with low dislocation density GaN. It is believed that threading dislocations induced by GaN template might be a part of origin of the pits,and modulate the effect of compressive stain on the InxAl(1-x)N quality.

作者: Zhenlin Miao Tongjun Yu Bo Shen Fujun Xu Jie Song Fang Lin Lubing Zhao Zhijian Yang

作者单位: State Key Laboratory for Mesoscopic Physics,School of Physics,Peking University,Beijing 100871,P.R.C State Key Laboratory for Mesoscopic hysics,School of Physics,Peking University,Beijing 100871,P.R.Ch

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 718-721

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）