Growth and characterization of Si/SiN/SiC structures by APCVD process

摘要：

Polycrystal 3C-SiC films have been grown on Si/SiN structures via atmospheric pressure chemical vapor deposition (APCVD) process with a SiH4-C3H8-H2 reaction gas system. The change of SiN microstructure during high temperature pretreatment,and its effect on the crystallinities of SiC growth films were measured using SEM and XRD. Experiment results show that high temperature pretreatment of substrates surface lead to a change of SiN from poly-crystal to quasi-crystal. The crystallized surface of SiN prevent the forming of Si-C bonding and growth of SiC films. This change can be controlled with a lower growth temperature and then a poly SiC films preferential orientation grown along <111>direction is obtained contained some poly-silicon grains.

关键词： CVD APCVD poly-crystal SiC films

作者: Yin-tang Yang Hu-jun Jia Chang-chun Chai Yue-jin Li

作者单位: Key laboratory of Education Ministry for WBG Semiconductor Materials and Devices,Xidian University,Xian 710071,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 730-733

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）