SYNTHESIS OF INDIUM PHOSPHIDE POLYCRYSTALLINE

摘要：

A large quantity of high purity InP crystal material has been produced by the phosphorus in-situ injection synthesis. In the injection method,phosphorus reacts with indium very quickly so that the rapid polycrystalline synthesis is possible. The injection speed,melt temperature,phosphorus excess, and so on are also important for a successful synthesis process. About 3200-4800g stoichiometric high purity poly InP is synthesized reproducibly by improved P-injection method in the highpressure puller. Twin-Free InP single crystals with diameter of 50-110mm can be pulled after the synthesis. In the present work,the characterization of IhP polycrystalline was studied by van der Pauw method,GDMS. and PL.

作者: Niefeng Sun Luhong Mao K.Sankaranarayanan Xiaolong Zhou Weilian Guo Xiawan Wu Tongnian Sun

作者单位: School of Electronic Information Engineering,Tianjin University,Tianjin,P.R.China National Key Labor School of Electronic Information Engineering,Tianjin University,Tianjin,P.R.China Crystal Research Centre,Alagappa University,Karaikudi-630003,TN,India National Key Laboratory of ASIC,Hebei Semiconductor Research Institute,Shijiazhuang,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 734-737

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）