Properties of High-Dielectric Constant Complez Materials based on Transition and Rare-Earth Metal Ozides

摘要：

It was found in elemental transition or rare earth metal (TM/RE) oxides that the electrical and material properties are much poor than those of the conventional gate dielectric materials such as silicon oxide or oxynitride. It was also found that the electrical and material properties of the high-dielectric constant (high-k) films can be improved or compromised by using complex structures such as silicates,oxynitride,aluminate and titanate. This work reviews the properties of high-k MOS gate dielectric materials based on TM/RE complex oxides in either pseudo-binary or stoichiometric forms. The effects of doping with foreign atoms,such as nitrogen and aluminum,will also be discussed.

作者: Hei Wong

作者单位: IC Design Laboratory,Department of Electronic Engineering,City U,Tat Chee Avenue,Kowloon,Hong Kong

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 761-764

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）