Advanced silicon and silicon-based materials for fast transition from micrometer- to nanometer-scale integrated-circuit technology

摘要：

300mm silicon single crystals have been grown using 24-28 hot zones with the aid of numerical simulation Mechanical strength of silicon seeds has been tested and a new style seed chuck developed. The damage layers during cutting,double side grinding (DSG) and double side polishing (DSP) have been investigated. The processing technology and the defects in silicon based materials such as silicon on insulator (SOI) and silicon germanium (SiGe) have also been discussed.

作者: Hailing Tu Qing Chang Xiaolin Dai Guanliang Wan Haibin Chen Junhui Huang Qinghua Xiao Yu Gao Qigang Zhou Guohu Zhang

作者单位: National Engineering Research Center for Semiconductor Materials,General Research Institute for Nonf National Engineering Research Center for emiconductor Materials,General Research Institute for Nonfe

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 769-772

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）