Surfaces and Interfaces for Controlled Defect Engineering

摘要：

The behavior of point defects within silicon can be changed significantly by controlling the chemical state at the surface. In ultrashallow junction applications for integrated circuits,such effects can be exploited to reduce transient enhanced diffusion,increase dopant activation, and reduce end-of-range damage.

作者: Edmund G.Seebauer

作者单位: Chemical and Biomolecular Engineering,University of Illinois,Urbana,IL 61801

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 773-776

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）