Fabrication of high-k gate dielectrics using plasma ozidation and subsequent annealing of Hf/SiO2/Si structure
High-permittivity (high-k) dielectrics with HfO2/HfxSi(1-x)Oy/Si structures were fabricated using plasma oxidation and subsequent annealing of Hf/SiO2/Si structure. By replacing SiO2 film of initial structure from plasma oxidized SiO2 to thermal oxidized SiO2,the drastic decrease of traps in interfacial layer (IL: HfxSi(1-x)Oy) could be successfully achieved,which shows interface state density of 1×1011 eV(-1)cm(-2),effective oxide thickness (EOT) of 1.2 nm,and 4 orders decrease of leakage current density relative to SiO2 with EOT of 1.2 nm. The influence of post annealing on structural and electrical properties of IL was investigated by using XPS analysis and TEM observation. It was clarified that the increase of EOT after post annealing at 900℃ is caused by the decrease of Hf content in IL and the increase of IL thickness. The kinetics of IL formation is discussed in details.
Hiroshi Nakashima Youhei Sugimoto Yuusaku Suehiro Keisuke Yamamoto Masanari Kajiwara Kana Hirayama Dong Wang
Art,Science and Technology Center for Cooperative Research,Kyushu University,6-1 Kasuga-koen,Kasuga, Interdisciplinary Graduate School of Engineering Sciences,Kyushu University,6-1 Kasuga-koen,Kasuga,F
国际会议
9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)
北京
英文
780-783
2008-10-20（万方平台首次上网日期，不代表论文的发表时间）