Improvement of dielectric properties of ZrO2 films prepared by limited reaction sputtering

摘要：

We investigated the growth of crystalline ZrO2 film prepared on p-Si(100 by limited reaction sputtering system under different growth temperatures from 400 to 700℃. The structural characteristics of the samples were studied by XRD,RHEED and AFM,which provided a solid identification of the phase transformation from monoclinic phase to tetragonal phase. The dielectric properties were studied by C-V and I-V measurements on Au/ZrO2/p-Si(100) MIS structures,suggesting that the tetragonal ZrO2 thin film shows excellent dielectric performances including a high permittivity up to 32 as well as a negligible flatband voltage shift in C-V curves.

作者: Ying Zhou Nobuo Kojima Kimihiro Sasaki Minoru Kumeda

作者单位: Graduate School of Natural Science and Technology,Kanazawa University,Kanazawa 920-1192,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 784-787

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）