Characterization of low-dielectric-constant SiCON films grown by PECVD under different RF power

摘要：

In this paper,we report the influence of RF power on carbon-and nitride-doped silicon oxide (SiCON) films deposited by PECVD using SiH4,N2O and C2F6 precursors. The deposited films are characterized by means of FTIR and XPS,revealing the coexistence of both ring and network frameworks as well as Si-C,Si-N,C-N,C-H and Si-0 bonds. The dielectric constant (k) and deposition rate of the SiCON film decrease with increasing the RF power. In the present experiment,a k value of 2.35 is achieved while retaining a low leakage current of 2.7×10(-7)A/cm2 at 7.8MV/cm.

作者: Lei Zhang Hao-Wen Guo Chi Zhang Wei Zhang Shi-Jin Ding

作者单位: School of Microelectronics,Fudan University,Shanghai 200433,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 788-791

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）