The difference of chemical binding states between ultra shallow plasma doping (PD) and ion implantation (I/I)samples by using hard X-ray photoelectron spectroscopy (HX-PES)

摘要：

We measured HX-PES (Si ls) of ultra low energy ion implantion (I/I) samples? ? combined with Ge pre-amorphizaiton implantation (Ge-PAI) before and after spike RTA,and compared it with that of plasma doping (PD) samples. As-doped I/I sample showed higher hole density compared to as-doped PD sample due to lower defect induced carrier trap. Ge-PAI+I/I sample showed strong asymmetric in lower binding energy region due to Si-Ge bonding. After spike RTA,PD sample showed superior impurity activation than that of Ge-PAI+I/I sample. Both Ge-PAI+I/I and PD sample showed excellent recrystallization after spike RTA.

作者: C.G.Jin M.Kobata Y.Sasaki K.Okashita K.Nakamoto B.Mizuno E.Ikenaga K.Kobayashi

作者单位: Ultimate Junction Technologies Inc.,3-1-1,Yagumonakamachi,Moriguchi,Osaka,570-8501,Japan Japan Synchrotron Radiation Research Institute (JASRI/SPring-8),Hyogo,Japan Japan Synchrotron Radiation Research Institute(JASRI/SPring-8),Hyogo,Japan

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 796-798

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）