Surface and interfacial properties of the ultra-thin HfO2 gate dielectric deposited by ALD

摘要：

In this work,the surface and interfacial properties of the ultra-thin HfO2/SiO2 gate stack dielectrics fabricated on the p-type Si (100) substrates by atomic layer deposition is studied. Grazing incidence x-ray diffraction result manifests the HfO2 film is almost ideal amorphous phase. Atomic force microscopy images reveal that the surface roughness of the HfO2 is extremely small and the surface presents a good uniformity. Transmission electron microscopy shows the thickness of the dielectric layers are 2.8 nm and 0.7 ran respectively. X-ray photoelectron spectroscopy indicates that the adventitious impurities carbon and nitrogen are keeping out of the dielectric layers and the interfacial layer SiO2 can suppress the formation of the hafnium silicates. All the properties show that the atomic layer deposition can deposit HfO2/SiO2 gate stack dielectrics with high performance.

作者: Liu Hong-xia Zhou Tao Aaron Zhao Sai Tallavarjula

作者单位: School of Microelectronics,Xidian University,Xian 710071,P.R.China Applied Materials Inc.,Shanghai 201203,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 803-806

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）