Improved High Temperature Retention and Endurance in HfON Trapping Memory with Double Quantum Barriers

摘要：

We have compared the device performance of double-quantum-barrier charge-trapping memory of a TaN/Ir3Si-HfAlO-LaMlO3-HfON0.2-HfAlO-SiO2-Si device with single barrier non-volatile memory MONOS devices at close EOT. At 150℃ under fast 100 us and low ±9 V P/E,the double-quantum-barrier charge-trapping device shows a 3.2 V initial ΔVth and 2.7 V 10-year extrapolated retention. This retention decay rate is much improved from single barrier device.

作者: Albert Chin H.J.Yang S.H.Lin C.C.Liao W.J.Chen F.S.Yeh

作者单位: Nano-Electronics Consortium of Taiwan China Electronics Eng.Dept,Natl Chiao-Tung Univ.,Hsinchu,Taiw Electronics Eng.Dept,Natl Chiao-Tung Univ.,Hsinchu,Taiwan,China Dept.of Electrical Eng.,National Tsing Hua Univ.,Hsinchu,Taiwan,China Graduate School of Materials Science,National Yunlin University of Science & Technology,Yunlin,Taiwa

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 811-814

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）