Memory Evolution: Multi-Functioning Unified-Random Access Memory (URAM)

摘要：

A new paradigm for silicon memory technology is proposed. A technological breakthrough that will overcome the saturation in revenue obtained from scaling,a novel type of fusion memory is presented. A high-speed DRAM and non-volatile flash memory are integrated in a single memory transistor. The memory cell is named Unified-Random Access Memory (URAM),as multi-functional operation is processed in a single memory cell,The paradigm shift from scaling to multi-function will create new value and continue the evolution of silicon memory technology.

作者: Yang-Kyu Choi Jin-Woo Han

作者单位: School of EECS,KAIST,373-1,Guseong-dong,Yuseong-gu,Daejeon,305-701,Korea

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 831-834

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）