A Novel Floating Gate Engineering Technique for Improved Data Retention of Flash Memory Devices

摘要：

We propose one novel approach on engineering floating gate (FG) of Flash memory cell: carbon incorporation into polysilicon FG. This technique demonstrated improvement in retention and larger program/erase Vth,window,especially for smaller capacitance coupling ratio cell which is important for future scaled Flash memory cells.

作者: Jing Pu Daniel S.H.Chan Byung Jin Cho

作者单位: Department of ECE,National University of Singapore,Singapore 117576 Department of EECS,KAIST,335 Science Road,Yuseong,DaeJeon,Korea 305-701

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 839-842

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）