Performance Improvement of Flash Memory with a Novel Quasi-SOI Structure

摘要：

A novel quasi-silicon-on-insulator (quasi-SOI) flash memory cell is proposed for the first time. By utilizing quasi-SOI structure,program/erase (P/E) performance improvement is achieved due to the enhancement of electric field in the injection region,compared with conventional cell structure. Moreover,the off-state current at large drain bias is greatly reduced by 2 orders of magnitude with the help of the L-shaped dielectric layer,indicating better program-failure immunity and lower unexpected power consumption. With punch-through effect alleviated,the novel flash cells have better scalability. Through the results and analysis,the proposed flash cell can be a potential candidate for NOR-type applications.

作者: Poren Tang Dake Wu Ru Huang

作者单位: Institute of Microelectronics,Peking University,Beijing 100871,P.R.China

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 846-849

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）