FEDRAM: A Capacitor-less DRAM Based on Ferroelectric-Gated Field-Effect Transistor

摘要：

A capacitor-less DRAM cell based on ferroelectric-gate memory transistor structure is introduced. Compared to the conventional DRAM cell,it offers much simpler cell structure,longer retention time,easier scaling, and lower power consumption. Cell size of 4F2 can be realized. It is also most suitable for embedded applications.

作者: T.P.Ma

作者单位: Department of Electrical Engineering,Yale University,New Haven,CT,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 850-852

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）