CMOS-Compatible Zero-Mask One Time Programmable (OTP)Memory Design

摘要：

A method to design CMOS-compatible diode-based One-Time Programmable (OTP) memory is discussed in this paper. In particular the program disturb problem is resolved by using diode drivers with sufficiently high breakdown voltage. The choices of memory elements and various available diodes in a standard CMOS process are carefully studied to obtain an optimal combination. Different memory cells were fabricated in standard 0.18-μm CMOS technology to verify the functionality of the design.

作者: Wan Tim Chan K.P.Ng M.C.Lee K.C.Kwong Lin Li Ricky M.Y Ng Tsz Yin Man Mansun Chan

作者单位: Department of Electronic and Computer Engineering,Hong Kong University of Science and Technology,Clear Water Bay,Kowloon,Hong Kong

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 861-864

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）