Resistive switching characteristics of metal ozide for nonvolatile memory applications

摘要：

The resistance switching characteristics of several metal oxides has been reported recently for nonvolatile memory applications (NVM). However,various issues such as the switching mechanisms,switching uniformity,scalability and reproducibility have not yet been solved. In this paper,we discuss the recent progress of switching mechanisms and switching behaviors of various materials.

作者: R.Dong M.Hasan H.J.Choi D.S.Lee M.B.Pyun D.J.Seong Hyunsang Hwang

作者单位: Department of Materials Science and Engineering,Gwangju Institute of Science and Technology,#1,Oryong-dong,Buk-ku,Gwangju,500-712,KOREA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 901-904

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）