Ezcellent Resistive Switching Characteristics of Cu doped ZrO2 and its 64 bit Cross-point Integration

摘要：

Excellent nonpolar resistive switching behavior is reported in the Cu doped ZrO2 memory devices with the sandwiched structure of Cu/ZrO2:Cu/Pt. The ratio between the high and low resistance is in the order of 106. Set and Reset operation in voltage pulse mode can be as fast as 50 ns and 100 ns,respectively. Multilevel storage is considered feasible due to the dependence of ON-state resistance on Set compliance current. The switching mechanism is demonstrated to be related with the formation and rupture of Cu conductive bridge. Based on this working cell,64 bit cross-point array is fabricated and tested.

作者: Ming Liu Weihua Guan Shibing Long Qi Liu Wei Wang

作者单位: Lab of Nanofabrication and Novel Device Integration,Institute of Microelectronics,Chinese Academy of College of Nanoscale Science and Engineering,University at Albany,255 Fuller Rd.Albany,NY 12203,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 905-908

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）