Si-Based Two-Terminal Resistive Switching Nonvolatile Memory

摘要：

We present recent studies on amorphous silicon (a-Si) based resistive switching nonvolatile memory devices. The devices exhibit excellent performance of high on/off resistance ratio,high yield,fast speed,long retention/endurance and are fully compatible with CMOS processing. High-density crossbar arrays were successfully demonstrated without degradation of the device performance as compared to single cell level devices.

作者: Sung Hyun Jo Wei Lu

作者单位: Department of Electrical Engineering and Computer Science The University of Michigan,Ann Aibor,MI 48109,USA

会议类型: 国际会议

会议名称: 9th International Conference on Solid-State and Integrated-Circuit Technology(第9届固态和集成电路国际会议)

会议地点: 北京

会议语种:英文

页码: 913-916

在线出版日期: 2008-10-20（万方平台首次上网日期，不代表论文的发表时间）